Researchers create ‘Universal’ memory as fast as RAM, could be basis for new types of non-volatile memory
Researchers create ‘Universal’ memory as fast as RAM, could be basis for new types of non-volatile memory In what could be a ground-breaking development in the future of Resistive Random Access Memory (ReRAM), researchers have found a way to create a ‘Universal’ memory that is as fast as RAM and has a non-volatile storage capacity comparable to Flash. Researchers from the Center of Shared Research Facilities at Moscow Institute of Physics and Technology (MIPT) have created “thin films” that could be the basis for creating new forms of non-volatile memory. To achieve this, they devised a method to control oxygen concentration in tantalum oxide films produced by a technique called Atomic Layer Deposition (ALD). It is vital to choose the right substances for use in ALD. “The hardest part in depositing oxygen-deficient films was finding the right reactants that would make it possible to both eliminate the ligands contained in the metallic precursor and control oxygen content in t...